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Yves Chabal
Professor & Director, Laboratory for Surface Modification
Email

B.A. Physics 1974 Princeton University
Ph.D. Physics 1980 Cornell University
 

Contact

 

Links

Phone: (732) 445-8248
Fax: (732) 445-4991
Lab: (732) 445-2158
Dept: (732) 445-4004

Office: NanoPhysics Lab, Room 205
Mail: Laboratory for Surface Modification
136 Frelinghuysen Road
Piscataway, NJ 08854

Research

Summary

In our laboratory, we use (and in some cases develop) optical spectroscopic and imaging techniques to explore elementary processes at surfaces and interfaces of technologically important electronic, photonic, organic and more recently biological heterostructures. For instance, we have been leading the implementation of infrared absorption spectroscopy to develop a detailed mechanistic understanding of semiconductor surface cleaning (both by wet and dry techniques), passivation, and chemical functionalization. In particular, we have devised sensitive, in-situ methods to probe the interaction of chemical species and the formation of thin dielectric films in a variety of environments, including liquids, ultra-high vacuum (UHV), and gaseous ambients. The work in our group has had a direct impact on:

1. Microelectronics, by identifying the surface modification after various wet chemical processes (HF etching, acid/base cleaning and etching) for several types of semiconductors (groups IV, IV-IV, III-V), by characterizing the nature of H, Cl, OH and oxide passivation of semiconductor surfaces, and by uncovering the growth mechanism of high-k dielectrics on silicon. We are currently exploring the growth by Atomic Layer Deposition (ALD) of Al2O3 and HfO2 with sub nm equivalent oxide thickness (to replace SiO2) and the best wet chemical cleaning methods for high mobility substrates (e.g. Ge, InP) to replace silicon in future CMOS devices. We are also investigating elementary processes at the surface of SiC, an important substrate for high temperature, high speed, and high voltage electronics.

2. Optoelectronics, by providing chemical information and badly needed fundamental understanding of III-V semiconductor surface passivation. After studying wet chemical etching and oxidation of InP, we are now exploring gaseous oxidation in controlled environments (e.g. UHV).

3. Organic electronics, by characterizing the chemical and structural nature of self-assembled monolayers (SAM’s) on both metal and semiconductor surfaces. We are focusing on providing chemical and structural information to understand electronic conduction in organic materials by paying special attention to contact issues (substrate/SAM interfaces and effects of depositing top metal electrodes on SAM films). We are also developing spectroscopic methods to study the dependence of electronic conduction on conformal changes within the SAM’s.

4. Nanoelectronics, by using biological approaches to patterning surfaces on the nm and sub-nm scale. For instance, the possibility to manipulate DNA scaffolding is used to meet tight nanolithography requirements of integrated nano-circuits. An important aspect of this work is the control of DNA bonding to semiconductor surfaces. To this end, we are working on the fundamentals of DNA/surface interactions.

5. Biosensors and biomedical applications, by understanding the interaction of biological macro-molecules (DNA, glucose, LDL, etc) with both organic and inorganic substrates. For instance, by studying the modulation of the electric field and charge transfer mechanisms by biological molecules, we are devising ways to implement electronic detection of biological species. The field of bio-sensors is wide open and in need of accurate surface characterization tools. Our group is therefore exploring the implementation of several tools specifically for biomedical applications, including spectroscopy and imaging. We are also exploring various means of single-wall carbon nanotube chemical functionalization to perform specific cellular functions both at the cell membrane and within the cell body.

Our group is interdisciplinary in nature, with collaborations in Physics, Chemistry, Materials Science, chemical and biomedical engineering, and even with the Medical School. We have ongoing interactions with laboratories in Belgium, France, Germany and Italy, and access to the National Synchrotron Light Source at Brookhaven Laboratory. Our goal is to develop the synergy necessary to make substantial scientific advances in surface and interfacial science, and to benefit in the process core US industries.

Awards & Honors

Fellow of the American Physical Society (1996)
Fellow of the American Vacuum Society (1995)
IBM Faculty Award (2003)

Representative Publications

2006


261.  Molecular beam deposition and thermal stability of amorphous lanthanum aluminate thin films on silicon , L. F. Edge, V. Vaithyanathan, D. G. Schlom, R. T. Brewer, S. Rivillon, Y. J. Chabal, M. P. Agustin, Y. Yang, S. Stemmer, H. S. Craft, J-P. Maria, M. E. Hawley, B. Holländer, J. Schubert, K. Eisenbeiser, submitted to J. Appl. Phys. (Jan. 2006)

260.  Molecular Ordering in Bis(phenylenyl)bithiophenes, M. Stickle, R. Kortan, S. Rivillon Amy, Y. Chabal, H. Katz, C. Kloc, T. Siegrist, submitted to Adv. Matt. (March 6, 2006)

259.  Alkylation of silicon(111) surfaces, S. Rivillon, Y. J. Chabal, J. Phys. IV France, 132, 195 (2006)

258.  Thermal stability of amorphous lanthanum scandium oxide films on silicon, L. F. Edge, D. G. Schlom, S. Rivillon, Y. J. Chabal, M. P. Agustin, S. Stemmer, H. S. Craft, J-P. Maria, M. E. Hawle, B. Holländer and J. Schuber, K. Eisenbeiser, J. Appl. Phys., 89, 062902 (2006)

257.  An Infrared Spectroscopic Investigation of the Reaction of Hydrogen-Terminated, (111)-Oriented, Silicon Surfaces with Liquid Methanol, D. J. Michalak, S. Rivillon Amy, Y. J. Chabal, N. S. Lewis, J. Phys. Chem. B (on line)

256.  Wet Chemical Cleaning of Germanium Surfaces for Growth of High-k Dielectrics, S. Rivillon Amy, Y. J. Chabal, F. Amy, A. Kahn, C. Krugg, P. Kirsch, in Gate Stack Scaling -- Materials Selection, Role of Interfaces, and Reliability Implications, edited by R. Jammy, A. Shanware, V. Misra, Y. Tsunashima, S. De Gendt (Mater. Res. Soc. Symp. Proc.
917E
, Warrendale, PA), 917-E01-05 (2006)

255. Transmission Infrared Spectroscopy of Methyl- and Ethyl-Terminated Silicon(111) Surfaces, L. J. Webb, S. Rivillon, D. J. Michalak, Y J. Chabal, and N S. Lewis, J.. Phys. Chem. B 110, 7349 (2006)

2005


254.  Ion backscattering study of ultra-thin oxides: Al2O3 and AlHfOx films on Si, L. S. Wielunski, Y. Chabal, M. Paunescu, M.-T. Ho, R. Brewer, J. E. Reyes, Nucl. Instr. and  Meth. in Phys. Res. B, 241, 377 (2005)

253.  Hydrogen-passivation of germanium(100) surface using wet chemical preparation, S. Rivillon, Y. J. Chabal, F. Amy, A. Kahn, Appl. Phys. Lett. 87, 253101 (2005)

252. Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP, A. Fontcuberta i Morral, J. M. Zahler, M. J. Griggs, H. A. Atwater, Y. J. Chabal, Phys. Rev. B, 72, 085219 (2005)

251.  Water reaction with chlorine-terminated silicon (111) and (100) surfaces, S. Rivillon, R. T. Brewer, Y. J. Chabal, 87, 173118 (2005

250.  Controlled silicon surface functionalization by alkene hydrosilylation, A. Langner, A. Panarello, S. Rivillon, O. Vassylyev, J. Khinast, Y. J. Chabal, J. Am. Chem. Soc., 127, 12798 (2005)

249.  In situ infrared spectroscopy of hafnium oxide growth on hydrogen-terminated silicon surfaces by atomic layer deposition, M.-T. Ho, Y. Wang, R. T. Brewer, L. S. Wielunski, Y. J. Chabal, N. Moumen, M. Boleslawski, App. Phys. Lett., 87, 133103 (2005)

248.  Silicon surface and interface issues for nanoelectronics, Y. Chabal, L. C. Feldman, Interface, 14(1), 31 (2005)

247. Chlorination of hydrogen-terminated silicon (111) surfaces, S. Rivillon, Y. J. Chabal, L. J. Webb, D. J. Michalak, N. S. Lewis, M. D. Halls, K. Raghavachari, J. Vac. Sci. Technol. A, 23(4),1100 (2005)

246.  HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition, M. M. Frank, G. D. Wilk, D. Starodub, T. Gustafsson, E. Garfunkel, Y. J. Chabal, J. Grazul, D. A. Muller, Appl. Phys. Lett., 86, 152904 (2005)

245.  High-k gate dielectrics on silicon and germanium: impact of surface preparation, M. M. Frank, H. Shang, S. Rivillon, F. Amy, C.-L. Hsueh, V. K. Paruchuri, R. T. Mo, M. Copel, E. P. Gusev, M. A. Gribelyuk, Y. J. Chabal, Solid State Phenom. 103-104, 3 (2005)

244.  Mechanistic studies of dielectric growth on silicon, M. M. Frank and Y. J. Chabal, Chapter 11 in Materials fundamental of gate dielectrics, A.A. Demkov and A. Navrotsky (edit.), Kluwer Academic Publisher (2005) p367-401.



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