Sylvie Rangan, Eric Bersch, Robert Allen Bartynski, Eric Garfunkel and Elio Vescovo; Band offsets of a ruthenium gate on ultrathin high-κ oxide films on silicon, Physical Review B 79, 075106 (2009). |
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Sylvie Rangan, Eric Bersch, Robert Allen Bartynski, Eric Garfunkel and Elio Vescovo; GeOx interface layer reduction upon Al-gate deposition on a HfO2 /GeOx/Ge(001) stack, Appl. Phys. Lett. 92, 172906 (2008). |
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Eric Bersch, Sylvie Rangan, Robert Allen Bartynski, Eric Garfunkel and Elio Vescovo; Band offsets of ultrathin high-κ oxide films with Si, Physical Review B 78, 085114 (2008). |
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Eric Garfunkel, Jacob Gavartin, Gennadi Bersuker; Defects in CMOS Gate Dielectrics, Defects in Microelectronic Materials and Devices: Edited by Daniel Fleetwood, Sokrates Pantolides, and Ronald D. Schrimpf, Published by CRC Press 2008 ISBN 1420043765 Chapter 11, pp 341-358. |
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M. Dalponte, H. Boudinov, L.V. Goncharova, E. Garfunkel and T. Gustafsson; MEIS study of antimony implantation in SIMOX and vacancy-rich Si(1 0 0), J. Phys. D: Appl. Phys. 40 4222-4227 (2007). |
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A. Du Pasquier, D.T. Mastrogiovanni, L.A. Klein, T. Wang, E. Garfunkel; Photoinduced charge transfer between poly(3-hexyl thiophene) and germanium nanowires, Appl. Phys. Lett. 91, (18) 183501 (2007). |
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N. Goel, W. Tsai, C. M. Garner, Y. Sun, P. Pianetta, M. Warusawithana, D. G. Schlom, H. Wen, C. Gaspe, J. C. Keay, M. B. Santos, L. V. Goncharova, E. Garfunkel, and T. Gustafsson; Band offsets between amorphous LaAlO3 and In0.53Ga0.47As, Appl. Phys. Lett. 91, 113515 (2007). |
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L. V. Goncharova, M. Dalponte, T. Gustafsson, O. Celik, E. Garfunkel, P. S. Lysaght and G. Bersuker; Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks, J. Vac. Sci. Tech. A 25, 261 (2007). |
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W. Jiang, E. Garfunkel, N. Zhitenev, D. Abusch-Magder, D. Tennant, Z. Bao; Molecular conductance measurements through printed Au nanodots, Appl. Phys. Lett. 89, (11) 113107 (2006). |
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C.M. Osburn, et al; Materials and Processes for High k Gate Stacks: Results from the FEP Transition Center, ECS Transactions, 3, (3) 389 (2006). |
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| E. Garfunkel, T. Gustafsson, P. Lysaght, S. Stemmer, R. Wallace; Atomic Scale Materials Characterization Clallenges in Advanced CMOS Gate Stacks, Future FAB International 21, 126 (2006). | Link | |||
| N.B. Zhitenev, W. Jiang, A. Erbe, Z. Bao, E. Garfunkel, D.M. Tennant, R. Cirelli; Control of topography, stress and diffusion at molecule–metal interfaces, Nanotechnology 17, p. 1272-1277 (2006). | Link | |||
| L.V. Goncharova, D.G. Starodub, E. Garfunkel, T. Gustafsson, V. Vaithyanathan, J. Lettieri, D.G. Schlom; Interface structure and thermal stability of epitaxial SrTiO3 thin films on Si(001), J. Appl. Phys. 100, 014912 (2006). | Link | |||
| R. Barnes, D. Starodub, T. Gustafsson, E. Garfunkel; A medium energy ion scattering and x-ray photoelectron spectroscopy study of physical vapor deposited thin cerium oxide films on Si(100), J. Appl. Phys. 100, 044103 (2006). | Link | |||
| L.V. Goncharova, M. Dalponte, D.G. Starodub, T. Gustafsson, E. Garfunkel, P.S. Lysaght, B. Foran, J. Barnett, G. Bersuker; Oxygen diffusion and reactions in Hf-based dielectrics, J. Appl. Phys. 89, 044108 (2006). | Link | |||
| B. Chen, R. Jha, H. Lazar, N. Biswas, J. Lee, B. Lee, L. Wielunski, E. Garfunkel, V. Misra; Influence of Oxygen Diffusion Through Capping Layers of Low Work Function Metal Gate Electrodes, IEEE Electron Device Letters 27, (4) p. 228-230 (2006). | Link | |||
| A. Erbe, W. Jiang, Z. Bao, E. Garfunkel, N. Zhitenev; Nanoscale patterning in application to materials and device structures, J. Vac. Sci. Technol. B 23, (6), p. 3132-3137 (2005). | Link | |||
| M. Hong, A. R. Kortan, P. Chang, Y. L. Huang, C. P. Chen, H. Y. Chou, H. Y. Lee, J. Kwo, M.-W. Chu, C. H. Chen, L. V. Goncharova, E. Garfunkel, and T. Gustafsson; High-quality nanothickness single-crystal Sc2O3 film grown on Si(111), Appl. Phys. Lett. 87, 251902 (2005). | Link | |||
| S. Sayan, N.V. N guyen, J. Ehrstein, J.J. Chambers, M.R. Visokay, M.A. Quevedo-Lopez, L. Colombo, D. Yoder, I. Levin, D.A. Fischer, M. Paunescu, O. Celik, E. Garfunkel; Effect of nitrogen on band alignment in HfSiON gate dielectrics, Appl. Phys. Lett. 87 (21), 212905 (2005). | Link | |||
| D.J. Lichtenwalner, J.S. Jur, A.I. Kingon, M.P. Agustin, Y. Yang, S. Stemmer, L.V. Goncharova, T. Gustafsson, E. Garfunkel; Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction, J. Appl. Phys. 98 (2), 024314 (2005). | Link | |||
| P.L. Grande, A. Hentz, G. Schiwietz, D. Starodub, E. Garfunkel, T. Gustafsson; Observation of collective inner-shell effects for protons backscattered from the Al(110) surface, Phys. Rev. A 72 (1), 012902 (2005). | Link | |||
| W. Jiang, N.B. Zhitenev, Z. Bao, H. Meng, D. Abusch-Magder, D. Tennant, E. Garfunkel; Structure and bonding issues at the interface between gold and self-assembled conjugated dithiol monolayers, Langmuir 21 p. 8751-8757 (2005). | Link | |||
| Martin M. Frank, Glen D. Wilk, Dmitri Starodub, Torgny Gustafsson, Eric Garfunkel, Yves J. Chabal, John Grazul and David A. Muller; HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition, Appl. Phys. Lett. 86, 152904 (2005). | Link | |||
| S. Sayan, N. V. Nguyen, J. Ehrstein, T. Emge, E. Garfunkel, M. Croft, Xinyuan Zhao, David Vanderbilt, I. Levin, E. P. Gusev, Hyoungsub Kim and P. J. McIntyre; Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon, Appl. Phys. Lett. 86, 152902 (2005). | Link | |||
| Annelies Delabie, et al; Atomic layer deposition of hafnium oxide on germanium substrates, J. Appl. Phys. 97, 064104 (2005). | Link | |||
| Nikolai B Zhitenev, Artur Erbe, Zhenan Bao, Weirong Jiang and Eric Garfunkel, Molecular nano-junctions formed with different metallic electrodes, Nanotechnology, 16, (2005) 1-6. | Link | |||
| M. Dalponte, H. Boudinov, L. V. Goncharova, D. Starodub, E. Garfunkel, and T. Gustafsson, Thermal activation of As implanted in bulk Si and separation by implanted oxygen, J. Appl. Phys., 96, 7388 (2004). | Link | |||
| S. Sayan, R. A. Bartynski, X. Zhao, E. P. Gusev, D. Vanderbilt, M. Croft, M. Banaszak Holl, and E. Garfunkel, Valence and conduction band offsets of a ZrO2/SiOxNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study, Phys. Stat. Sol. B, 241, No. 10, p2246–2252 (2004). | Link | |||
| S. Sayan, T. Emge, E. Garfunkel, et al, Band alignment issues related to HfO2 /SiO2 /p-Si gate stacks, J. Appl. Phys. 96 (9), p7485 (2004). | Link | |||
| D. Starodub, T. Gustafsson and E. Garfunkel; The reaction of O2 with Al(110): a medium energy ion scattering study of nano-scale oxidation, Surf. Sci. 552, 199 (2004). | Link |
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| S. Dhar, Y. W. Song, L. C. Feldman, T. Isaacs-Smith, C. C. Tin, and J. R. Williams, G. Chung, T. Nishimura, D. Starodub, T. Gustafsson, and E. Garfunkel; Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(112) 4H-SiC interface; Appl. Phys. Lett. 84(9) p1498 (2004). | Link | |||
| Joseph H. Han, Guilian Gao, Yuniarto Widjaja, Eric Garfunkel, Charles B. Musgrave; A quantum chemical study of ZrO2 atomic layer deposition growth reactions on the SiO2 surface; Surface Science 550, 199 (2004). | Link |
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| Martin M. Frank, Safak Sayan, Sabine Dormann, Thomas J. Emge, Leszek S. Wielunski, Eric Garfunkel, Yves J. Chabal; Hafnium oxide gate dielectrics grown from an alkoxide precursor: structure and defects; Materials Science and Engineering B, 109, (1-3), 15 June 2004, Pages 6-10. | Link |
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| Isaac M. Rutenberg, Oren A. Scherman, Robert H. Grubbs, Weirong Jiang, Eric Garfunkel, and Zhenan Bao; Synthesis of Polymer Dielectric Layers for Organic Thin Film Transistors via Surface-Initiated Ring-Opening Metathesis Polymerization, J. Am. Chem. Soc. Comm. 126, 2064 (2004). | Link |
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| Bert de Boer, Martin M. Frank, Yves J. Chabal, Weirong Jiang, Eric Garfunkel, Zhenan Bao, Metallic Contact Formation for Molecular Electronics: Interactions between Vapor-Deposited Metals and Self-Assembled Monolayers of Conjugated Mono- and Dithiols, Langmuir, 20(5), 1539 (2004). | Link | |||
| J. Zhong, S. Muthukumar, Y. Chen, and Y. Lu, H.M. Ng, W. Jiang and E.L. Garfunkel, Ga-doped ZnO single-crystal nanotips grown on fused silica by metal-organic chemical vapor deposition, Appl. Phys. Lett 83 (16), 3401 (2003). | Link | |||
| S. Sayan, E. Garfunkel, T. Nishimura, W.H. Schulte T. Gustafsson. G. Wilk, Thermal decomposition behavior of the HfO2/SiO2/Si system, J. Appl. Phys. 94 (2) 928 (2003). | Link | |||
| S. Suzer, S. Sayan, M.M.B. Holl, E. Garfunkel, Z. Hussain, N.M. Hamdan, Soft x-ray photoemission studies of Hf oxidationJ, Vac. Sci. Tech. A 21(1) 106 (2003). | Link | |||
| W. Tsai, R.J. Carter, H. Nohira, M. Caymax, T. Conard, W. Cosnier, S. DeGendt, M. Heyns, J. Petry, O. Richard, W. Vandervorst, E. Young, C. Zhao, J. Maes, M. Tuominen, W.H. Schulte, E. Garfunkel, T. Gustafsson, Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition Microelectr. Eng. 65(3) 259 (2003) | Link | |||
| J. Kwo, M. Hong, B. Busch, D.A. Muller, Y.J. Chabal, A.R. Kortan, J.P. Mannaerts, B. Yang, P. Ye, H. Gossmann, A.M. Sergent, K.K. Ng, J. Bude, W.H. Schulte, E. Garfunkel, T. Gustafsson, Advances in high kappa gate dielectrics for Si and III-V semiconductors, Cryst. Growth; 251(1-4) 645 (2003). | Link | |||
| G.D. Wilk, M.L. Green, M.-Y. Ho, B.W. Busch, T.W. Sorsch, F.P. Klemens, B. Brijs, R.B. van Dover, A. Kornblit, T. Gustafsson, E. Garfunkel, S. Hillenius, D. Monroe, P. Kalavade, J.M. Hergenrother; Improved film growth and flatband voltage control of ALD HfO2 and Hf-Al-O with n+ poly-Si gates using chemical oxides and optimized post-annealing; VLSI Technology Symposium, Digest of Technical Papers, p88 (2002). | ||||
| Y.J. Chabal, K. Ragavachari, X. Zhang and E. Garfunkel Silanone (Si=O) on Si(100): intermediate for initial silicon oxidation, Phys. Rev. B; 66161315 (2002). | Link | |||
| B.W. Busch, O. Pluchery, Y.J. Chabal, D.A. Muller, R.L. Opila, J.R. Kwo, Garfunkel E, Materials characterization of alternative gate dielectrics, invited review, MRS Bulletin, 27 (3), 206 (2002). | Link | |||
| S. Sayan, S. Aravamudhan, B.W. Busch, W.H. Schulte, F. Cosandey, G.D. Wilk, T. Gustafsson, E. Garfunkel, Chemical vapor deposition of HfO2 films on Si(100), J. Vac. Sci. Tech. A20 (2), 507 (2002). | Link | |||
| S. Sayan, E. Garfunkel, S. Suzer, Soft x-ray photoemission studies of the HfO2/SiO2/Si system, Appl. Phys. Lett. 80 (12), 2135 (2002). | Link | |||
| J. Kwo, B. Busch, D. A. Muller, M. Hong, Y. J. Chabal, L. Manchanda, A. R. Kortan, J. P. Mannaerts, T. Boone, W. H. Schulte, E. Garfunkel, and T. Gustafsson; High-k Y2O3 and Gd2O3 Gate Stacks: A Vehicle for Critical Materials Integration Issues; Proceedings IEDM Symposium, 2001 | ||||
| W.H. Schulte, E. Garfunkel and T. Gustafsson, I. Baumvol, E. Gusev, Ion Beam Studies of Silicon Oxidation and Oxynitridation, chapter, Ed: Y. Chabal, Springer Verlag, (2001). | ||||
| M. L. Green, E. P. Gusev, R. Degraeve, and E. L. Garfunkel, Ultrathin SiO2 and Si-O-N Gate Dielectric Layers for Silicon Microelectronics: Understanding the Processing, Structure, and Physical and Electrical Limits, invited review, J. Appl. Phys. 90 (5) 2057 (2001). | Link | |||
| X. Zhang, Y.J. Chabal, S.B. Christman, E.E. Chaban, E. Garfunkel, Oxidation of H-covered flat and vicinal Si(111)-1x1 surfaces, J. Vac. Sci. Tech. A19 (4) 1725, (2001). | Link | |||
| J. J. Chambers, B. W. Busch, W.H. Schulte, T. Gustafsson and E. Garfunkel, S. Wang and D. M. Maher, T. M. Klein, G. N. Parsons, Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon, accepted, Appl. Surf. Sci., 181, 78 (2001). | Link | |||
| J-P. Maria, D. Wicaksana, A. I. Kingon, B.W. Busch, W.H. Schulte, T. Gustafsson, and E. Garfunkel, High temperature stability in lanthanum-based and zirconium-based gate dielectrics, accepted, J. Appl. Phys. 90, 3476 (2001). | Link | |||
| H.C. Lu, E.P. Gusev, E. Garfunkel, B.W. Busch, T. Gustafsson, T. Sorch, and M.L. Green, Isotopic Labeling Studies of Interactions of Nitric Oxide and Nitrous Oxide with Ultrathin Oxynitride Layers on Silicon, Journal of Applied Physics, 87, p1550, (2000). | Link | |||
| H. C. Lu, E. Gusev, N. Yasuda, M. Green, G. Alers, E. Garfunkel and T. Gustafsson, Growth chemistry and interfacial properties of Si oxynitride and metal oxide ultrathin films on Si, Appl. Surf. Sci., 166, 465 (2000). | ||||
| B.W. Busch, W.H. Schulte, E. Garfunkel, T. Gustafsson, W. Qi, R. Nieh and J. Lee, Oxygen Exchange and Transport in Thin Zirconia Films on Si(100), Phys. Rev. B 62(20), 13,290 (2000). | Link | |||
| E.P. Gusev, H.C. Lu, E. Garfunkel, T. Gustafsson, and M.L. Green, Growth and Characterization of Ultrathin Nitrided Oxide Films, IBM Journal of Research and Development, (invited) 43, 265 (1999). | ||||
| A.C. Diebold, D. Venables, Y. Chabal, D. Muller, M. Weldon, and E. Garfunkel, Characterization and production metrology of thin transistor gate oxide films, Materials Science in semiconductor Processing, invited review, 2, 103 (1999). | Link | |||
| L.C. Feldman, E.P. Gusev, and E. Garfunkel, “Ultrathin Dielectrics in Si Microelectronics” in Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, edited by E. Garfunkel, E. Gusev and A. Vul’, Kluwer Acad. Publisher, p39, (1998). | ||||
| Edited Book | ||||
| Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, Eds. E. Garfunkel, E. Gusev, A. Vul’, Kluwer Academic Publishers, NATO Science Series, 1998. Back to top |
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